2STX1360-AP
TRANS NPN 60V 3A TO92APManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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The STMicroelectronics 2STX1360-AP is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a maximum collector-emitter breakdown voltage of 60V and a continuous collector current capability of 3A. With a transition frequency of 130MHz and a power dissipation of 1W, it is suitable for various industrial and consumer electronics applications. The device exhibits a minimum DC current gain (hFE) of 160 at 1A and 2V, and a Vce saturation of 500mV at 150mA and 3A. Supplied in a TO-92AP package, the 2STX1360-AP offers a maximum operating junction temperature of 150°C, ensuring reliable performance in demanding environments. Its robust construction and electrical characteristics make it a valuable component for power management and signal conditioning circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 150mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 1A, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TO-92AP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
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