2STR1160
TRANS NPN 60V 1A SOT23-3Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics 2STR1160 is an NPN bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage (Vceo) of 60V and a continuous collector current (Ic) capability of 1A. The maximum power dissipation is 500mW, and it operates within a junction temperature range of up to 150°C. Key electrical characteristics include a minimum DC current gain (hFE) of 180 at 500mA and 2V, and a saturation voltage (Vce(sat)) of 430mV at 100mA and 1A. The collector cutoff current (Icbo) is specified at 100nA. The transistor is housed in a SOT-23-3 package and supplied on tape and reel (TR). This device is commonly utilized in consumer electronics and general-purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 430mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |