2STN2550
TRANS PNP 50V 5A SOT223Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics 2STN2550 is a PNP Bipolar Junction Transistor (BJT) designed for high-performance applications. This component features a 50V collector-emitter breakdown voltage (Vce) and a maximum collector current (Ic) of 5A, with a power dissipation of 1.6W. Achieving a minimum DC current gain (hFE) of 110 at 2A and 2V, it exhibits a Vce(sat) of 550mV at 3A collector current and 300mA base current. The maximum collector cutoff current (Icbo) is rated at 100nA. Operating at temperatures up to 150°C (TJ), it is housed in a SOT-223 package (TO-261-4, TO-261AA) for surface mounting. This transistor is commonly utilized in power switching and amplification circuits within industrial, automotive, and consumer electronics sectors. The 2STN2550 is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-223 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1.6 W |
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