2STL2580-AP
TRANS NPN 400V 1A TO92MODManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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The STMicroelectronics 2STL2580-AP is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a high collector-emitter breakdown voltage of 400V and a continuous collector current capability of 1A, with a maximum collector power dissipation of 1.5W. It offers a minimum DC current gain (hFE) of 60 at 250mA and 5V, and a collector-emitter saturation voltage of 1V at 200mA and 1A. The transistor operates within a junction temperature range of 150°C. Encased in a TO-92MOD package, it is suitable for through-hole mounting. This device finds utility in various industrial sectors, including power supply units and general-purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 250mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 1.5 W |
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