2STL2580
TRANS NPN 400V 1A TO92MODManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics' 2STL2580 is a high-voltage NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a maximum collector-emitter breakdown voltage of 400V and can handle a continuous collector current of up to 1A. With a maximum power dissipation of 1.5W, it is suitable for applications requiring efficient power handling. The transistor exhibits a minimum DC current gain (hFE) of 60 at 250mA and 5V, with a Vce(sat) of 1V at 200mA and 1A. The collector cutoff current (ICBO) is a low 10µA. Packaged in a TO-92MOD (TO-226-3, TO-92-3 Long Body) for through-hole mounting, the 2STL2580 operates reliably up to 150°C. This device finds application in power control and switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 250mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92MOD |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 1.5 W |