2STF1340
TRANS NPN 40V 3A SOT89-3Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics NPN Bipolar Junction Transistor (BJT), part number 2STF1340, is designed for demanding applications requiring robust performance. This component features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current (Ic) of 3A. With a transition frequency of 100MHz, it is suitable for various switching and amplification tasks. The transistor exhibits a minimum DC current gain (hFE) of 180 at 1A and 2V, and a Vce saturation of 350mV at 150mA and 3A. The maximum power dissipation is rated at 1.4W. The 2STF1340 is supplied in a SOT-89-3 (TO-243AA) surface mount package, delivered on tape and reel for automated assembly. This device finds application in areas such as power management, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 150mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 1A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1.4 W |