2STD1360T4
TRANS NPN 60V 3A DPAKManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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The STMicroelectronics 2STD1360T4 is an NPN bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 3A, with a power dissipation of 15W. It offers a minimum DC current gain (hFE) of 160 at 1A collector current and 2V collector-emitter voltage, and a transition frequency of 130MHz. The transistor is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, supplied on tape and reel. The saturation voltage (Vce Sat) is a maximum of 500mV at 150mA base current and 3A collector current. The collector cutoff current (ICBO) is rated at 100nA. This device is suitable for use in various industrial and consumer electronics applications requiring efficient switching and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 150mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 1A, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 15 W |
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