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2STC4467

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2STC4467

TRANS NPN 120V 8A TO3P

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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The STMicroelectronics 2STC4467 is an NPN bipolar junction transistor (BJT) designed for robust power applications. This through-hole component, housed in a TO-3P package, offers a 120V collector-emitter breakdown voltage and a continuous collector current capability of 8A. With a maximum power dissipation of 80W and a transition frequency of 20MHz, it is suitable for power switching and amplification circuits. The device exhibits a minimum DC current gain (hFE) of 70 at 3A and 4V, and a Vce saturation of 1.5V at 300mA and 3A. Its operating junction temperature can reach up to 150°C. This transistor finds utility in various industrial applications, including power supplies and motor control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 300mA, 3A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 3A, 4V
Frequency - Transition20MHz
Supplier Device PackageTO-3P
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max80 W

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