2STA1962
TRANS PNP 230V 15A TO3PManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics 2STA1962 is a high-power PNP bipolar junction transistor (BJT) in a TO-3P package. This device is rated for a continuous collector current (Ic) of up to 15A and features a collector-emitter breakdown voltage (Vce) of 230V. With a transition frequency (fT) of 30MHz and a maximum power dissipation of 150W, it is suitable for demanding applications. The minimum DC current gain (hFE) is 80 at 1A and 5V, with a saturation voltage (Vce(sat)) of 3V at 800mA and 8A. The transistor exhibits a low collector cutoff current (Icbo) of 5µA. The 2STA1962 is designed for through-hole mounting and operates at junction temperatures up to 150°C. It finds application in power supply circuits, audio amplifiers, and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Current - Collector Cutoff (Max) | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-3P |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 230 V |
| Power - Max | 150 W |
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