2ST5949
TRANS NPN 250V 17A TO3Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics 2ST5949 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This component features a maximum collector-emitter breakdown voltage of 250V and can handle a continuous collector current of up to 17A. With a power dissipation capability of 250W and a transition frequency of 25MHz, it is suitable for demanding switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 80 at 1A collector current and 5V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 3V for 800mA base current and 8A collector current. The transistor is housed in a TO-3 (TO-204AA) package, facilitating chassis mounting for effective thermal management. Its robust specifications make it a reliable choice for industrial power control, audio amplification, and general-purpose high-voltage switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Current - Collector Cutoff (Max) | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
| Frequency - Transition | 25MHz |
| Supplier Device Package | TO-3 |
| Current - Collector (Ic) (Max) | 17 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 250 W |
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