2ST1480FP
TRANS NPN 80V 5A TO220FPManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics NPN Bipolar Junction Transistor (BJT), part number 2ST1480FP, offers robust performance in a TO-220FP package. This device features a maximum collector current (Ic) of 5 A and a collector-emitter breakdown voltage (Vce) of 80 V. It delivers a minimum DC current gain (hFE) of 170 at 500 mA and 5 V, with a transition frequency of 120 MHz. The maximum power dissipation is 25 W, and it operates at junction temperatures up to 150°C. Key parameters include a Vce(sat) of 1 V at 300 mA and 3 A, and a collector cutoff current (Icbo) of 100 nA. This through-hole mounted component is suitable for applications in power switching and general purpose amplification across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 170 @ 500mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-220FP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 25 W |
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