2SD2012
TRANS NPN 60V 3A TO220FManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics 2SD2012 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 60V collector-emitter breakdown voltage and a maximum collector current of 3A. With a transition frequency of 3MHz and a power dissipation of 25W, it is suitable for use in power supply circuits, linear regulators, and audio amplifiers. The transistor offers a minimum DC current gain (hFE) of 100 at 500mA and 5V. It is packaged in a TO-220F (TO-220-3 Full Pack) through-hole mounting configuration, operating at temperatures up to 150°C. The saturation voltage (Vce) is specified at a maximum of 1V for 200mA base current and 2A collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 5V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-220F |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 25 W |
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