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2SD2012

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2SD2012

TRANS NPN 60V 3A TO220F

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

Quality Control: Learn More

STMicroelectronics 2SD2012 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 60V collector-emitter breakdown voltage and a maximum collector current of 3A. With a transition frequency of 3MHz and a power dissipation of 25W, it is suitable for use in power supply circuits, linear regulators, and audio amplifiers. The transistor offers a minimum DC current gain (hFE) of 100 at 500mA and 5V. It is packaged in a TO-220F (TO-220-3 Full Pack) through-hole mounting configuration, operating at temperatures up to 150°C. The saturation voltage (Vce) is specified at a maximum of 1V for 200mA base current and 2A collector current.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 5V
Frequency - Transition3MHz
Supplier Device PackageTO-220F
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max25 W

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