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2SD1047

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2SD1047

TRANS NPN 140V 12A TO3P

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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The STMicroelectronics 2SD1047 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component features a 140V collector-emitter breakdown voltage and a maximum continuous collector current of 12A, with a power dissipation rating of 100W. It offers a transition frequency of 20MHz and a minimum DC current gain (hFE) of 60 at 1A and 5V. The saturation voltage (Vce(sat)) is specified at a maximum of 700mV under 700mA base current and 7A collector current. This device is supplied in a TO-3P package, making it suitable for power supply circuits, audio amplifiers, and general-purpose switching applications in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 700mA, 7A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 1A, 5V
Frequency - Transition20MHz
Supplier Device PackageTO-3P
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)140 V
Power - Max100 W

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