2SB772
TRANS PNP 30V 3A SOT32-3Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics' 2SB772 is a PNP bipolar junction transistor designed for robust performance in demanding applications. This component features a 30V collector-emitter breakdown voltage and a maximum collector current of 3A, enabling it to handle moderate power loads. With a transition frequency of 100MHz and a maximum power dissipation of 12.5W, it is suitable for amplification and switching circuits. The minimum DC current gain (hFE) is 100 at 100mA and 2V, ensuring efficient signal transfer. The transistor exhibits a Vce(sat) of 1.1V at 150mA and 3A, indicating low saturation voltage for effective switching. Packaged in a SOT-32-3 (TO-225AA, TO-126-3) for through-hole mounting, this device is commonly found in industrial automation, consumer electronics, and power management systems. It operates within a junction temperature range of 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.1V @ 150mA, 3A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-32-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 12.5 W |
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