Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

2N6111

Banner
productimage

2N6111

TRANS PNP 30V 7A TO220

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

Quality Control: Learn More

STMicroelectronics PNP Bipolar Junction Transistor (BJT), part number 2N6111. This device features a 30V collector-emitter breakdown voltage and a maximum collector current of 7A. With a power dissipation of 40W and a transition frequency of 4MHz, it is suitable for applications requiring moderate switching speeds and current handling. The minimum DC current gain (hFE) is specified at 30 for an Ic of 3A and Vce of 4V. The saturation voltage (Vce Sat) is a maximum of 3.5V at 3A base current and 7A collector current. This component is housed in a TO-220 package and is designed for through-hole mounting. The operating junction temperature range extends to 150°C. Applications for this transistor include power switching, linear amplification, and general-purpose amplification circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3.5V @ 3A, 7A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 3A, 4V
Frequency - Transition4MHz
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)7 A
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max40 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
STBV42G

TRANS NPN 400V 1A TO92-3

product image
2STR2160

TRANS PNP 60V 1A SOT23-3

product image
BDW94CFP

TRANS PNP DARL 100V 12A TO220FP