2N5657
TRANS NPN 350V 0.5A SOT32-3Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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The STMicroelectronics 2N5657 is a high-voltage NPN bipolar junction transistor (BJT) designed for robust power switching and amplification applications. This through-hole component, housed in a TO-225AA (SOT-32-3) package, offers a maximum collector-emitter breakdown voltage of 350V and can handle a continuous collector current of up to 500mA. With a power dissipation rating of 20W and a transition frequency of 10MHz, it is suitable for use in power supplies, lighting control, and general-purpose high-voltage switching circuits. The device exhibits a minimum DC current gain (hFE) of 30 at 100mA and 10V. Its operating temperature range extends to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 10V @ 100mA, 500mA |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA, 10V |
| Frequency - Transition | 10MHz |
| Supplier Device Package | SOT-32-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 20 W |
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