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2N5192

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2N5192

TRANS NPN 80V 4A SOT32-3

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

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STMicroelectronics 2N5192 is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This through-hole component features a maximum collector current (Ic) of 4 A and a collector-emitter breakdown voltage (Vce) of 80 V. The device offers a minimum DC current gain (hFE) of 20 at 1.5 A and 2 V, with a saturation voltage (Vce(sat)) of 1.4 V at 1 A and 4 A. Its transition frequency is 2 MHz, and it can dissipate up to 40 W of power. The 2N5192 is housed in a SOT-32-3 package, also identified as TO-225AA or TO-126-3, and operates at temperatures up to 150°C (TJ). This transistor is commonly utilized in industrial and consumer electronics for power switching and amplification circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.4V @ 1A, 4A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 1.5A, 2V
Frequency - Transition2MHz
Supplier Device PackageSOT-32-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max40 W

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