2N5154S1
RAD-HARD 80 V, 5 A NPN TRANSISTOManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics NPN Bipolar Junction Transistor (BJT), part number 2N5154S1. This surface mount device is rated for 80 V collector-emitter breakdown voltage and a continuous collector current of 5 A, dissipating up to 35 W. It features a minimum DC current gain (hFE) of 70 at 2.5 A and 5 V. The collector cutoff current is specified at a maximum of 1 µA. The Vce(sat) is a maximum of 1.5 V at 500 mA collector current and 5 A. Designed for high-temperature operation with a junction temperature rating of 200°C. The device is supplied in the TO-276AA (SMD5) package. Commonly utilized in aerospace and defense applications requiring radiation hardening.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: StripDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Strip |
| Package / Case | TO-276AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | SMD5 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 35 W |
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