2N3439
TRANS NPN 350V 1A TO39Manufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics' 2N3439 is a high-voltage NPN bipolar junction transistor (BJT) designed for demanding applications. Featuring a collector-emitter breakdown voltage of 350V and a continuous collector current capability of 1A, this component is well-suited for power switching and amplification tasks. Its 15MHz transition frequency allows for operation in moderate-frequency circuits. The device exhibits a minimum DC current gain (hFE) of 40 at 20mA collector current and 10V collector-emitter voltage, with a saturation voltage of 500mV at 4mA base current and 50mA collector current. With a maximum power dissipation of 1W and an operating junction temperature of 200°C, the 2N3439 is suitable for use in industrial control systems, power supplies, and general-purpose amplification circuits. The TO-39 packaged transistor is available in tube packaging for efficient assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | 15MHz |
| Supplier Device Package | TO-39 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 1 W |
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