2N2907AUB1
RAD-HARD 60 V, 0.6 A PNP TRANSISManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics 2N2907AUB1 is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. This component offers a collector-emitter breakdown voltage of 60 V and a maximum collector current of 500 mA, with a power dissipation capability of 1.8 W. It features a low collector cutoff current of 50 nA and a minimum DC current gain (hFE) of 100 at 150 mA and 10 V. The transistor exhibits a Vce saturation of 1.6 V at 50 mA and 500 mA. Operating across an extended temperature range from -65°C to 200°C, the 2N2907AUB1 is housed in a 3-SMD, No Lead package (UB). This component is suitable for use in demanding environments, including aerospace and defense applications. It is supplied in trays.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.8 W |
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