2N2222AUBG
TRANS NPN 50V 0.8A UBManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics' 2N2222AUBG is a bipolar junction transistor (BJT) featuring an NPN configuration. This component offers a collector-emitter breakdown voltage (Vce) of 50V and a continuous collector current (Ic) capability of 800mA, with a maximum power dissipation of 1W. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V. Saturation voltage (Vce(sat)) is specified at a maximum of 300mV for an operating point of 15mA base current and 150mA collector current. Designed for surface mounting, it is supplied in a 4-SMD, No Lead UB package, delivered on tape and reel. The operating temperature range extends from -65°C to 200°C (TJ). This component finds application in general-purpose amplification and switching circuits across various electronic systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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