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2N2222AUBG

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2N2222AUBG

TRANS NPN 50V 0.8A UB

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

Quality Control: Learn More

STMicroelectronics' 2N2222AUBG is a bipolar junction transistor (BJT) featuring an NPN configuration. This component offers a collector-emitter breakdown voltage (Vce) of 50V and a continuous collector current (Ic) capability of 800mA, with a maximum power dissipation of 1W. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V. Saturation voltage (Vce(sat)) is specified at a maximum of 300mV for an operating point of 15mA base current and 150mA collector current. Designed for surface mounting, it is supplied in a 4-SMD, No Lead UB package, delivered on tape and reel. The operating temperature range extends from -65°C to 200°C (TJ). This component finds application in general-purpose amplification and switching circuits across various electronic systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 15mA, 150mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUB
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max1 W

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