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2N2222AUB1

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2N2222AUB1

RAD-HARD 50 V, 0.8 A NPN TRANSIS

Manufacturer: STMicroelectronics

Categories: Single Bipolar Transistors

Quality Control: Learn More

STMicroelectronics 2N2222AUB1 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount device, housed in a UB package, offers a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA. It features a low saturation voltage of 300mV at 15mA base current and 150mA collector current, with a minimum DC current gain (hFE) of 100 at 150mA and 10V. The transistor exhibits a low collector cutoff current of 10nA (ICBO) and a maximum power dissipation of 500mW. Its robust construction and specified operating temperature of up to 200°C make it suitable for use in harsh environments, including aerospace and defense systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 15mA, 150mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUB
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max500 mW

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