2N2222AUB1
RAD-HARD 50 V, 0.8 A NPN TRANSISManufacturer: STMicroelectronics
Categories: Single Bipolar Transistors
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STMicroelectronics 2N2222AUB1 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount device, housed in a UB package, offers a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA. It features a low saturation voltage of 300mV at 15mA base current and 150mA collector current, with a minimum DC current gain (hFE) of 100 at 150mA and 10V. The transistor exhibits a low collector cutoff current of 10nA (ICBO) and a maximum power dissipation of 500mW. Its robust construction and specified operating temperature of up to 200°C make it suitable for use in harsh environments, including aerospace and defense systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
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