ST50V10200
RF MOSFET LDMOS M246Manufacturer: STMicroelectronics
Categories: RF FETs, MOSFETs
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STMicroelectronics ST50V10200 is an N-Channel LDMOS RF power transistor. This device delivers 225W of output power with a typical gain of 17.5dB. Designed for high-power RF applications, it operates with a rated voltage of 110V. The component utilizes LDMOS technology for efficient performance in demanding environments. Its robust design and power handling capabilities make it suitable for use in telecommunications infrastructure, industrial heating, and broadcast systems. The ST50V10200 is supplied in Bulk packaging and features a M246 package for chassis mounting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M246 |
| Current Rating (Amps) | 1µA |
| Mounting Type | Chassis Mount |
| Frequency | - |
| Configuration | N-Channel |
| Power - Output | 225W |
| Gain | 17.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | M246 |
| Voltage - Rated | 110 V |
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