SGT65R65AL
RF MOSFET GAN HEMT 400V PWRFLATManufacturer: STMicroelectronics
Categories: RF FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics SGT65R65AL is a high-performance GaN HEMT RF power transistor. This N-Channel device is designed for demanding applications requiring high efficiency and power density. Featuring a 650V breakdown voltage and a 400V test voltage, it excels in high-frequency power conversion and amplification. The SGT65R65AL boasts a 25A current rating and a 5W output power capability, making it suitable for power supplies, industrial motor control, and RF power amplifiers. Its Surface Mount configuration, housed in an 8-PowerVDFN (PowerFlat™ 5x6 HV) package, facilitates efficient thermal management and compact board design. This component is ideal for use in telecommunications infrastructure, industrial automation, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Current Rating (Amps) | 25A |
| Mounting Type | Surface Mount |
| Frequency | - |
| Configuration | N-Channel |
| Power - Output | 5W |
| Gain | - |
| Technology | GaN HEMT |
| Noise Figure | - |
| Supplier Device Package | PowerFlat™ (5x6) HV |
| Voltage - Rated | 650 V |
| Voltage - Test | 400 V |
Request a Quote
Clients Also Buy
SD2931-12W
RF MOSFET 50V M244
LET9070CB
RF MOSFET LDMOS 28V M243
PD55008L-E
RF MOSFET LDMOS 12.5V POWERFLAT
