RF5L08600CB4
RF MOSFET LDMOS 50V D4EManufacturer: STMicroelectronics
Categories: RF FETs, MOSFETs
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STMicroelectronics RF5L08600CB4 is a high-power LDMOS RF MOSFET designed for robust performance in demanding applications. This component operates within a frequency range of 400MHz to 1GHz, delivering a typical gain of 19.5dB. It is rated for a 50V test voltage and features a 110mA test current, with a 1µA current rating. The device is supplied in a D4E package for chassis mounting, facilitating efficient thermal management. With a substantial 650W output power capability, this RF MOSFET is well-suited for use in industrial, medical, and defense electronics, where reliable high-frequency power amplification is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: Last Time BuyPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | D4E |
| Current Rating (Amps) | 1µA |
| Mounting Type | Chassis Mount |
| Frequency | 400MHz ~ 1GHz |
| Configuration | - |
| Power - Output | 650W |
| Gain | 19.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | D4E |
| Voltage - Rated | 115 V |
| Voltage - Test | 50 V |
| Current - Test | 110 mA |
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