RF3L05200CB4
RF MOSFET LDMOS LBBManufacturer: STMicroelectronics
Categories: RF FETs, MOSFETs
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STMicroelectronics RF MOSFET LDMOS, part number RF3L05200CB4, is a high-power RF transistor designed for demanding applications. Operating at frequencies up to 1GHz, this device delivers a nominal 200W output power with a typical gain of 19dB. Featuring LDMOS technology, it offers robust performance and linearity. The RF3L05200CB4 is housed in an LBB package, intended for chassis mounting, and rated for a drain-source voltage of 90V. This component is commonly utilized in broadcast equipment, radar systems, and industrial RF heating applications. Supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: Last Time BuyPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | LBB |
| Current Rating (Amps) | 1µA |
| Mounting Type | Chassis Mount |
| Frequency | 1GHz |
| Configuration | - |
| Power - Output | 200W |
| Gain | 19dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | LBB |
| Voltage - Rated | 90 V |