RF2L16180CB4
RF MOSFET LDMOS 28V B4EManufacturer: STMicroelectronics
Categories: RF FETs, MOSFETs
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STMicroelectronics RF MOSFET LDMOS, part number RF2L16180CB4, is a high-power device designed for demanding RF applications. This component operates at 1.6 GHz with a typical gain of 14 dB and delivers 180W of output power. It features a 28V test voltage and a 600mA test current, utilizing LDMOS technology for efficient performance. The device is supplied in a B4E package, presented on a Tape & Reel (TR) for automated assembly. Applications for this RF FET include base station infrastructure and other high-frequency power amplification systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | B4E |
| Current Rating (Amps) | 1µA |
| Mounting Type | Chassis Mount |
| Frequency | 1.6GHz |
| Power - Output | 180W |
| Gain | 14dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | B4E |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 600 mA |
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