PD85006-E
RF MOSFET LDMOS 13.6V POWERSO10Manufacturer: STMicroelectronics
Categories: RF FETs, MOSFETs
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STMicroelectronics PD85006-E is an RF MOSFET utilizing LDMOS technology, designed for high-frequency power amplification. This component delivers 6W of output power at 870MHz with a typical gain of 17dB. It operates with a drain-source voltage rating of 40V and is tested at 13.6V with a drain current of 200mA. The current rating is specified at 2A. Packaged in a 10-PowerSO with an exposed bottom pad, it is supplied in a tube for efficient handling. This device is suitable for applications in the wireless infrastructure and industrial sectors requiring robust RF power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Current Rating (Amps) | 2A |
| Frequency | 870MHz |
| Power - Output | 6W |
| Gain | 17dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | 10-PowerSO |
| Voltage - Rated | 40 V |
| Voltage - Test | 13.6 V |
| Current - Test | 200 mA |
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