PD20015-E
RF MOSFET LDMOS 13.6V PWRSO-10RFManufacturer: STMicroelectronics
Categories: RF FETs, MOSFETs
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STMicroelectronics PD20015-E is an RF LDMOS power transistor designed for high-frequency applications. This component operates at a 13.6V test voltage and delivers 15W of output power at 2GHz. It features a gain of 11dB and a continuous drain current rating of 7A, with a test current of 350mA. The device is housed in a PowerSO-10RF package with formed leads, providing robust thermal management through its exposed bottom pad. This technology is well-suited for demanding applications in wireless infrastructure, industrial, and defense sectors requiring high linearity and efficiency. The PD20015-E is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
| Current Rating (Amps) | 7A |
| Frequency | 2GHz |
| Power - Output | 15W |
| Gain | 11dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | PowerSO-10RF (Formed Lead) |
| Voltage - Rated | 40 V |
| Voltage - Test | 13.6 V |
| Current - Test | 350 mA |
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