PD20010TR-E
RF MOSFET LDMOS 13.6V PWRSO-10RFManufacturer: STMicroelectronics
Categories: RF FETs, MOSFETs
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STMicroelectronics PD20010TR-E is a 10W LDMOS RF power transistor designed for high-frequency applications. This device operates at 2GHz, delivering 10W of output power with a gain of 11dB. It is rated for a 40V breakdown voltage and is tested at 13.6V with a 150mA current. The PD20010TR-E is housed in a PowerSO-10RF package with formed leads, suitable for surface-mount assembly. Its performance characteristics make it suitable for use in wireless infrastructure, radar systems, and other demanding RF power amplification tasks. The component is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
| Current Rating (Amps) | 5A |
| Frequency | 2GHz |
| Power - Output | 10W |
| Gain | 11dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | PowerSO-10RF (Formed Lead) |
| Voltage - Rated | 40 V |
| Voltage - Test | 13.6 V |
| Current - Test | 150 mA |
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