PD20010STR-E
RF MOSFET LDMOS 13.6V PWRSO-10RFManufacturer: STMicroelectronics
Categories: RF FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics PD20010STR-E is an LDMOS RF power MOSFET designed for high-frequency applications. This component operates at a rated voltage of 40V and is typically tested at 13.6V. It delivers 10W of output power with a gain of 11dB at 2GHz. The device features a current rating of 5A, with a test current of 150mA. Packaged in a PowerSO-10RF (Straight Lead) with an exposed bottom pad, this component is supplied on tape and reel for efficient assembly. Its performance characteristics make it suitable for use in wireless infrastructure, radar systems, and other demanding RF power amplifier designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) |
| Current Rating (Amps) | 5A |
| Frequency | 2GHz |
| Power - Output | 10W |
| Gain | 11dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | PowerSO-10RF (Straight Lead) |
| Voltage - Rated | 40 V |
| Voltage - Test | 13.6 V |
| Current - Test | 150 mA |
Request a Quote
Clients Also Buy
PD55008L-E
RF MOSFET LDMOS 12.5V POWERFLAT
PD20015-E
RF MOSFET LDMOS 13.6V PWRSO-10RF
SD3933
RF MOSFET 100V M177
