PD20010S-E
RF MOSFET LDMOS 13.6V PWRSO-10RFManufacturer: STMicroelectronics
Categories: RF FETs, MOSFETs
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STMicroelectronics PD20010S-E is an RF LDMOS power transistor designed for high-frequency applications. This component features a 40V breakdown voltage and operates effectively at 13.6V with a typical test current of 150mA. Delivering 10W of output power at 2GHz, it provides an 11dB gain. The device is housed in a PowerSO-10RF package with straight leads and an exposed bottom pad, facilitating efficient thermal management. Its robust LDMOS technology ensures reliable performance in demanding RF power amplification circuits. This transistor finds utility in wireless infrastructure, broadcasting, and industrial RF systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) |
| Current Rating (Amps) | 5A |
| Frequency | 2GHz |
| Power - Output | 10W |
| Gain | 11dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | PowerSO-10RF (Straight Lead) |
| Voltage - Rated | 40 V |
| Voltage - Test | 13.6 V |
| Current - Test | 150 mA |
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