PD20010-E
RF MOSFET LDMOS 13.6V PWRSO-10RFManufacturer: STMicroelectronics
Categories: RF FETs, MOSFETs
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STMicroelectronics PD20010-E is an LDMOS RF power transistor designed for high-frequency power amplification. This component operates at 13.6V with a typical output power of 10W at 2GHz. It features a gain of 11dB at its test conditions, with a test current of 150mA. The device is housed in a PowerSO-10RF package with formed leads and an exposed bottom pad for enhanced thermal dissipation. The PD20010-E is suitable for demanding applications within the wireless infrastructure and industrial sectors, leveraging its robust LDMOS technology for reliable performance. Its voltage rating extends up to 40V, providing design flexibility for various power requirements.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
| Current Rating (Amps) | 5A |
| Frequency | 2GHz |
| Power - Output | 10W |
| Gain | 11dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | PowerSO-10RF (Formed Lead) |
| Voltage - Rated | 40 V |
| Voltage - Test | 13.6 V |
| Current - Test | 150 mA |
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