LET9180
RF MOSFET LDMOS 32V M246Manufacturer: STMicroelectronics
Categories: RF FETs, MOSFETs
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STMicroelectronics LET9180 is an LDMOS RF power transistor designed for high-frequency applications. This component operates at 860MHz, delivering a power output of 175W with a typical gain of 20dB. It is rated for a drain-source voltage of 80V and tested at 32V with a drain current of 500mA. The LET9180 features an M246 package, suitable for demanding thermal management. Its robust LDMOS technology ensures reliability and performance in base station infrastructure and industrial heating applications. This device is supplied in Tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | M246 |
| Current Rating (Amps) | 24A |
| Frequency | 860MHz |
| Power - Output | 175W |
| Gain | 20dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | M246 |
| Voltage - Rated | 80 V |
| Voltage - Test | 32 V |
| Current - Test | 500 mA |
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