LET9060
RF MOSFET LDMOS 28V POWERSO-10RFManufacturer: STMicroelectronics
Categories: RF FETs, MOSFETs
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The STMicroelectronics LET9060 is a high-performance RF LDMOS transistor designed for demanding applications. This component delivers 60W of output power at 960MHz with a typical gain of 17.2dB. It operates with a drain-source voltage of up to 80V, and is tested at 28V with a drain current of 300mA. The PowerSO-10RF package with formed leads and an exposed bottom pad ensures robust thermal management and efficient power dissipation. This device is suitable for use in base station infrastructure, industrial, scientific, and medical (ISM) applications, and other high-power RF systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
| Current Rating (Amps) | 12A |
| Frequency | 960MHz |
| Power - Output | 60W |
| Gain | 17.2dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | PowerSO-10RF (Formed Lead) |
| Voltage - Rated | 80 V |
| Voltage - Test | 28 V |
| Current - Test | 300 mA |
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