LET20030C
RF MOSFET LDMOS 28V M243Manufacturer: STMicroelectronics
Categories: RF FETs, MOSFETs
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The STMicroelectronics LET20030C is an RF LDMOS transistor designed for high-power applications. This component operates at a drain current of 400 mA with a test voltage of 28 V, delivering 45W of output power at 2 GHz. It features a gain of 13.9 dB and is housed in an M243 package. With its LDMOS technology, the LET20030C is suitable for demanding RF power amplification in wireless infrastructure and broadcasting. The rated voltage for this device is 80 V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | M243 |
| Current Rating (Amps) | 9A |
| Frequency | 2GHz |
| Power - Output | 45W |
| Gain | 13.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | M243 |
| Voltage - Rated | 80 V |
| Voltage - Test | 28 V |
| Current - Test | 400 mA |
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