LET16060C
RF MOSFET LDMOS 28V M243Manufacturer: STMicroelectronics
Categories: RF FETs, MOSFETs
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STMicroelectronics LET16060C is a high-power RF LDMOS transistor designed for demanding wireless infrastructure applications. This device operates at 1.6GHz, delivering 60W of output power with a typical gain of 13.8dB at a 28V test voltage and 400mA test current. The LET16060C is built on advanced LDMOS technology, ensuring robust performance and efficiency. It is packaged in an M243 configuration, suitable for high-frequency power amplification circuits. Industries benefiting from this component include cellular base stations, radar systems, and other high-frequency telecommunications equipment. The LET16060C is supplied in a box package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | M243 |
| Current Rating (Amps) | 12A |
| Frequency | 1.6GHz |
| Power - Output | 60W |
| Gain | 13.8dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | M243 |
| Voltage - Rated | 80 V |
| Voltage - Test | 28 V |
| Current - Test | 400 mA |
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