NAND512R3A2BZA6E
IC FLASH 512MBIT PAR 63VFBGAManufacturer: STMicroelectronics
Categories: Memory
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STMicroelectronics NAND512R3A2BZA6E is a 512Mbit NAND Flash memory component designed for non-volatile storage applications. Featuring a parallel interface, this device offers an access time of 60 ns and a page write cycle time of 60 ns. The memory organization is 64M x 8, utilizing advanced FLASH technology. It operates within a voltage range of 1.7V to 1.95V and is rated for an operating temperature of -40°C to 85°C. The component is housed in a 63-VFBGA package with dimensions of 8.5x15. This memory solution finds application in various industrial sectors requiring reliable data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 63-VFBGA (8.5x15) |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 60 ns |
| Memory Organization | 64M x 8 |
| Programmable | Not Verified |
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