NAND01GW3B2AN6E
IC FLASH 1GBIT PARALLEL 48TSOPManufacturer: STMicroelectronics
Categories: Memory
Quality Control: Learn More
STMicroelectronics NAND01GW3B2AN6E is a 1Gbit Non-Volatile Parallel FLASH memory device organized as 128M x 8. This component features a 30 ns access time and a page write cycle time of 30 ns. Operating within a voltage range of 2.7V to 3.6V, it is suitable for surface mount applications and comes packaged in a 48-TSOP (48-TFSOP). The NAND01GW3B2AN6E is designed for use in demanding applications across various industries, including automotive and industrial automation. Its robust FLASH NAND technology ensures reliable data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 48-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 48-TSOP |
| Write Cycle Time - Word, Page | 30ns |
| Memory Interface | Parallel |
| Access Time | 30 ns |
| Memory Organization | 128M x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
M27C512-70C1
IC EPROM 512KBIT PARALLEL 32PLCC
M48Z35Y-70MH6E
IC NVSRAM 256KBIT PARALLEL 28SOH
M27C322-100S1
IC EPROM 32MBIT PARALLEL 42SDIP
