NAND01GW3A2AN6E
IC FLASH 1GBIT PARALLEL 48TSOPManufacturer: STMicroelectronics
Categories: Memory
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STMicroelectronics NAND01GW3A2AN6E is a 1Gbit NAND Flash memory device designed for high-density non-volatile storage applications. This component features a parallel interface with a typical access time of 30 ns, enabling efficient data retrieval. The memory organization is 128M x 8, providing a robust architecture for data storage. Operating within a voltage range of 2.7V to 3.6V, and specified for an industrial temperature range of -40°C to 85°C, the NAND01GW3A2AN6E is suitable for demanding environments. The device is housed in a 48-TSOP package, facilitating surface mount assembly. This NAND Flash technology finds application in consumer electronics, industrial control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 48-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 48-TSOP |
| Write Cycle Time - Word, Page | 30ns |
| Memory Interface | Parallel |
| Access Time | 30 ns |
| Memory Organization | 128M x 8 |
| Programmable | Not Verified |
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