Home

Products

Integrated Circuits (ICs)

Memory

Memory

NAND01GW3A0AN6E

Banner
productimage

NAND01GW3A0AN6E

IC FLASH 1GBIT PARALLEL 48TSOP

Manufacturer: STMicroelectronics

Categories: Memory

Quality Control: Learn More

STMicroelectronics NAND01GW3A0AN6E is a 1Gbit NAND Flash memory device featuring a parallel interface. This non-volatile memory component offers a memory organization of 128M x 8 with an access time of 30 ns. The device operates within a supply voltage range of 2.7V to 3.6V and has a word/page write cycle time of 30ns. Packaged in a 48-TSOP (0.724", 18.40mm width) for surface mounting, it is suitable for applications requiring robust data storage. The operating temperature range is -40°C to 85°C (TA). This component is commonly utilized in consumer electronics, industrial automation, and automotive systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / Case48-TFSOP (0.724"", 18.40mm Width)
Mounting TypeSurface Mount
Memory Size1Gbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NAND
Memory FormatFLASH
Supplier Device Package48-TSOP
Write Cycle Time - Word, Page30ns
Memory InterfaceParallel
Access Time30 ns
Memory Organization128M x 8
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
M24C32-XDW5TP

IC EEPROM 32KBIT I2C 1MHZ 8TSSOP

product image
M27C512-10C6

IC EPROM 512KBIT PARALLEL 32PLCC

product image
M95040-DRMF3TG/K

IC EEPROM 4KBIT SPI 20MHZ 8MLP