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STG3P2M10N60B

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STG3P2M10N60B

IGBT MOD 600V 19A 56W SEMITOP2

Manufacturer: STMicroelectronics

Categories: IGBT Modules

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STMicroelectronics STG3P2M10N60B is a three-phase inverter IGBT module from the SEMITOP® series. This chassis-mount device is rated for 600 V collector-emitter breakdown voltage and can handle a continuous collector current of 19 A, with a maximum power dissipation of 56 W. The module features a low Vce(on) of 2.5 V at 15V gate-emitter voltage and 7A collector current. Input capacitance (Cies) is specified at 720 pF at 25 V. With an operating temperature range of -40°C to 150°C (TJ), this module is suitable for applications in industrial automation and power conversion systems. The SEMITOP®2 package facilitates efficient thermal management.

Additional Information

Series: SEMITOP®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSEMITOP®2
Mounting TypeChassis Mount
InputSingle Phase Bridge Rectifier
ConfigurationThree Phase Inverter
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 7A
NTC ThermistorNo
Supplier Device PackageSEMITOP®2
IGBT Type-
Current - Collector (Ic) (Max)19 A
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max56 W
Current - Collector Cutoff (Max)10 µA
Input Capacitance (Cies) @ Vce720 pF @ 25 V

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