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A2P75S12M3

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A2P75S12M3

IGBT MOD 1200V 75A ACEPACK2

Manufacturer: STMicroelectronics

Categories: IGBT Modules

Quality Control: Learn More

STMicroelectronics A2P75S12M3 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module designed for three-phase inverter applications. This component offers a collector-emitter breakdown voltage of 1200V and a maximum collector current of 75A, with a maximum power dissipation of 454.5W. The module features a Vce(on) of 2.3V at 15V gate-emitter voltage and 75A collector current. Input capacitance (Cies) is rated at 4.7 nF at 25V. The A2P75S12M3 includes an integrated NTC thermistor for thermal monitoring and is specified for operation across an extended temperature range of -40°C to 150°C (TJ). It is housed in an ACEPACK™ 2 package suitable for chassis mounting. This IGBT module is commonly utilized in industrial automation, renewable energy systems, and electric vehicle powertrains.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationThree Phase Inverter
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 75A
NTC ThermistorYes
Supplier Device PackageACEPACK™ 2
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max454.5 W
Current - Collector Cutoff (Max)100 µA
Input Capacitance (Cies) @ Vce4.7 nF @ 25 V

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