A2C50S65M2
IGBT MOD 650V 50A 208W ACEPACK2Manufacturer: STMicroelectronics
Categories: IGBT Modules
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STMicroelectronics A2C50S65M2 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module designed for demanding power applications. This component features a 650 V collector-emitter breakdown voltage and a maximum collector current of 50 A, with a power dissipation rating of 208 W. The module is configured as a three-phase inverter with integrated braking capability, utilizing a three-phase bridge rectifier input. Key electrical characteristics include a Vce(on) of 2.3V at 15V Vge and 50A Ic, and an input capacitance (Cies) of 4.15 nF at 25V. For thermal management and protection, an NTC thermistor is included. The A2C50S65M2 employs the ACEPACK™ 2 package for chassis mounting, operating within a temperature range of -40°C to 150°C (TJ). This device is suitable for use in industrial motor drives, renewable energy systems, and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Three Phase Bridge Rectifier |
| Configuration | Three Phase Inverter with Brake |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 50A |
| NTC Thermistor | Yes |
| Supplier Device Package | ACEPACK™ 2 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Power - Max | 208 W |
| Current - Collector Cutoff (Max) | 100 µA |
| Input Capacitance (Cies) @ Vce | 4.15 nF @ 25 V |
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