A1P50S65M2-F
IGBT MOD 650V 50A 208W ACEPACK1Manufacturer: STMicroelectronics
Categories: IGBT Modules
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STMicroelectronics IGBT Module A1P50S65M2-F is a Trench Field Stop IGBT featuring a 650V collector-emitter breakdown voltage and a maximum collector current of 50A. This module delivers 208W of power and is configured as a three-phase inverter. Key electrical characteristics include a Vce(on) of 2.3V at 15V Vge and 50A Ic, and an input capacitance (Cies) of 4.15 nF at 25V. The device incorporates an NTC thermistor for thermal management and is designed for chassis mounting. Operating within a temperature range of -40°C to 150°C (TJ), this module is suitable for applications in industrial power systems and electric vehicle powertrains. The supplier device package is ACEPACK™ 1.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Three Phase Inverter |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 50A |
| NTC Thermistor | Yes |
| Supplier Device Package | ACEPACK™ 1 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Power - Max | 208 W |
| Current - Collector Cutoff (Max) | 100 µA |
| Input Capacitance (Cies) @ Vce | 4.15 nF @ 25 V |