A1P50S65M2
IGBT MOD 650V 50A 208W ACEPACK1Manufacturer: STMicroelectronics
Categories: IGBT Modules
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STMicroelectronics A1P50S65M2 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module featuring a 650V collector-emitter breakdown voltage and a 50A collector current. This module is configured as a three-phase inverter, offering a maximum power dissipation of 208W. The Vce(on) is rated at 2.3V maximum at 15V Vge and 50A Ic. It includes an integrated NTC thermistor for thermal management and has a low input capacitance of 4.15 nF at 25V. The ACEPACK™ 1 package facilitates chassis mounting, making it suitable for applications in industrial motor drives, renewable energy systems, and electric vehicle powertrains. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Three Phase Inverter |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 50A |
| NTC Thermistor | Yes |
| Supplier Device Package | ACEPACK™ 1 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Power - Max | 208 W |
| Current - Collector Cutoff (Max) | 100 µA |
| Input Capacitance (Cies) @ Vce | 4.15 nF @ 25 V |
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