A1P35S12M3-F
IGBT MOD 1200V 35A 250W ACEPACK1Manufacturer: STMicroelectronics
Categories: IGBT Modules
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STMicroelectronics IGBT Module, part number A1P35S12M3-F, is a Trench Field Stop Insulated Gate Bipolar Transistor designed for three-phase inverter applications. This ACEPACK™ 1 module offers a collector-emitter voltage rating of 1200V and continuous collector current capacity of 35A. With a maximum power dissipation of 250W and a low on-state voltage of 2.45V (typical) at 15V gate-emitter voltage and 35A collector current, it delivers efficient power switching. The module incorporates an integrated NTC thermistor for thermal monitoring. Its chassis mount design facilitates integration into power modules for industrial automation, renewable energy systems, and electric vehicle powertrains. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Three Phase Inverter |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 35A |
| NTC Thermistor | Yes |
| Supplier Device Package | ACEPACK™ 1 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 35 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 250 W |
| Current - Collector Cutoff (Max) | 100 µA |
| Input Capacitance (Cies) @ Vce | 2.154 nF @ 25 V |
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