L6389EDTR
IC GATE DRVR HALF-BRIDGE HI/LOManufacturer: STMicroelectronics
Categories: Gate Drivers
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STMicroelectronics L6389EDTR is a high-voltage half-bridge gate driver designed for driving power MOSFETs and IGBTs. This device features two independent gate drivers, each capable of sourcing 400mA and sinking 650mA peak output current. The L6389EDTR supports a high-side bootstrap voltage up to 600V, making it suitable for demanding power applications. Input signals are inverting, with logic thresholds of 1.1V (VIL) and 1.8V (VIH). The device operates over a junction temperature range of -45°C to 125°C and is supplied in an 8-SOIC package, surface-mounted. Typical rise and fall times are 70ns and 40ns respectively. This component is widely utilized in industrial power supplies, motor control, and electric vehicle applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -45°C ~ 125°C (TJ) |
| Voltage - Supply | 17V (Max) |
| Input Type | Inverting |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Supplier Device Package | 8-SOIC |
| Rise / Fall Time (Typ) | 70ns, 40ns |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel, P-Channel MOSFET |
| Logic Voltage - VIL, VIH | 1.1V, 1.8V |
| Current - Peak Output (Source, Sink) | 400mA, 650mA |
| Programmable | Not Verified |
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