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L6389ED

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L6389ED

IC GATE DRVR HALF-BRIDGE HI/LO

Manufacturer: STMicroelectronics

Categories: Gate Drivers

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The STMicroelectronics L6389ED is a half-bridge gate driver IC designed for efficient control of power transistors. This device features independent high-side and low-side drivers, supporting both IGBT and MOSFET gate drive requirements. It offers peak output currents of 400mA source and 650mA sink, with fast rise and fall times of 70ns and 40ns respectively. The L6389ED operates with a supply voltage up to 17V and boasts a high-side bootstrap voltage capability of 600V. Input logic levels for VIH/VIL are 1.8V and 1.1V. This component is housed in an 8-SOIC surface-mount package. Applications for the L6389ED include motor control, power supplies, and industrial automation systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-45°C ~ 125°C (TJ)
Voltage - Supply17V (Max)
Input TypeInverting
High Side Voltage - Max (Bootstrap)600 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)70ns, 40ns
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH1.1V, 1.8V
Current - Peak Output (Source, Sink)400mA, 650mA
ProgrammableNot Verified

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