L6384E
IC GATE DRVR HALF-BRIDGE 8DIPManufacturer: STMicroelectronics
Categories: Gate Drivers
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STMicroelectronics L6384E is a dual-channel, half-bridge gate driver IC designed for driving high-voltage power transistors. This device features an inverting input for each of its two independent drivers, enabling synchronous or complementary operation. The L6384E supports IGBT and N-Channel MOSFET gate drive with a peak output current of 400mA sourcing and 650mA sinking. It is engineered for applications requiring high-side voltage up to 600V, utilizing a bootstrap capacitor for efficient high-side drive. The logic input voltage thresholds are set at 1.5V (VIL) and 3.6V (VIH).
Operating within a supply voltage range of 14.6V to 16.6V, the L6384E exhibits typical rise and fall times of 50ns and 30ns respectively. Its robust design is suitable for demanding environments, operating across an extended temperature range of -45°C to 125°C (TJ). The component is housed in a standard 8-DIP (0.300", 7.62mm) through-hole package, facilitating easy integration into existing designs. This device finds utility in various industrial applications, including motor control and power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -45°C ~ 125°C (TJ) |
| Voltage - Supply | 14.6V ~ 16.6V |
| Input Type | Inverting |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Supplier Device Package | 8-DIP |
| Rise / Fall Time (Typ) | 50ns, 30ns |
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Logic Voltage - VIL, VIH | 1.5V, 3.6V |
| Current - Peak Output (Source, Sink) | 400mA, 650mA |
| Programmable | Not Verified |
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